A team led by Prof. Hao Jianhua, Head of the Department of Physics and Materials, Chair Professor of Materials Physics and Devices and Associate Director of PolyU-Wuhan Technology and Innovation Research Institute, in collaboration with researchers from the National University of Singapore, HKUST, Peking University, and the Singapore University of Technology and Design, has engineered a novel tunnelling field-effect transistor utilising 2D nanomaterials that can overcome the “Boltzmann tyranny”, which restricts the energy efficiency of traditional transistors and stalls progress in high-performance electronics. This breakthrough provides a scalable roadmap for energy-efficient microchips and specialised hardware powering AI applications.
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