At the recently concluded 2026 IEEE MTT‑S International Microwave Symposium (IMS) , two students, namely Ruxuan Zhao and Yixuan Huang stood out among global competitors, winning second place and third place respectively in two highly competitive student design contests, bringing great honour to Hong Kong and PolyU.
In the “SDC4: Allen Katz High‑Efficiency Power Amplifier (HEPA) Student Design Competition” , Ruxuan Zhao, PhD student secured Third Place with their exceptional amplifier design, outperforming numerous entries from around the world. This competition is one of the oldest and most fiercely contested student design events at IMS, aiming to explore advanced power amplifier topologies for next‑generation wireless communications.
Simultaneously, in the “SDC5: High‑Efficiency Power Amplifier Design for 220 MHz” competition, Yixuan Huang, Undergraduate student claimed Second Place. The team achieved an excellent balance of efficiency and linearity at 220 MHz, further demonstrating their deep expertise in RF power amplifier design.
