Inductively Coupled Plasma (ICP) Etcher

Introduction:

Inductively Coupled Plasma Etcher (ICP) system is a dry etching system used in micro-fabrication. The system makes use of chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.

Specifications:

• Substrate size: Up to 4”
• Pressure control: Automatic
• Gas: 6 gas lines (CF₄, SF₆, Ar, O₂, CH₄, H₂)
• RF generator: 600W, 13.56MHz, solid state RF generator
• Reactor temp. control: External chiller is used to enhance process reproducibility and the etch by-products are more readily volatilized
• Application: Isotropic or anisotropic etching of silicon dioxide, silicon nitride etc

Notes to user:

Supplier information:

         https://triontech.com/etch-platform/phantom-icp/

Please click here to download the equipment introduction poster.

Equipment location:

Room HJ705 (Class 1,000)