In commemoration of the 100th anniversary of the invention of the Field-Effect Transistor (FET), the IEEE Electron Devices Society (EDS) held the inaugural FET100 Forum Plenary Session in Hong Kong during the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025). Chaired by Prof. Philip C. H. Chan, the forum featured invited keynote speeches from five world-renowned experts, who provided a systematic review encompassing the invention of the FET, its historical evolution, modeling methodologies, transformative impact on the industry, and future trajectories.
