A research team led by Professor Jianhua Hao, Head of the Department of Physics and Materials, Chair Professor of Materials Physics and Devices, and Associate Director of the PolyU-Wuhan Technology and Innovation Research Institute, in collaboration with researchers from the National University of Singapore, The Hong Kong University of Science and Technology, Peking University, and the Singapore University of Technology and Design, has developed a novel quantum-tunnelling field-effect transistor (TFET) using two-dimensional nanomaterials. Their research findings have been published in the journal Science.
The invented transistor overcomes a fundamental limitation of conventional semiconductor technology, known as the “Boltzmann tyranny”, which constrains the energy efficiency of traditional transistors and hinders further progress in high-performance electronics. This breakthrough, published in Science, represents a significant advance towards ultra-low-power, high-performance integrated circuits for emerging artificial intelligence (AI) and advanced computing applications.
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