Skip to main content Start main content

AP Seminar - Properties of Oxygen Vacancies and Correlated Physical Effects in HfO2-based Thin Films

Poster for Website_Properties of Oxygen
  • Date

    23 May 2023

  • Organiser

  • Time

    14:00 - 15:00

  • Venue

    CD620, 6/F, Wing CD, PolyU Map  


Prof. Jinfeng Kang


Various magical and wonderful physical effects and properties have been demonstrated in the HfO2-based thin films and devices such as high K gate dielectrics in CMOS, resistive switching in resistance random access memory (RRAM), the robust ferroelectricity in ferroelectric devices, and so on. Those excellent characteristics have triggered the extensive research interests of both the fundamentals and applications for the HfO2-based thin films.  However, the underlying physical mechanisms that dominate those demonstrated characteristics in the HfO2-based thin films and devices are still argued. Various theoretical and experimental results showed that the observed fantastic properties in HfO2-based thin films and devices are strongly correlated with the behaviours of oxygen vacancy defects existed in HfO2-based thin films. In this talk, we will try to understand the fantastic characteristics observed in HfO2-based thin films from the unified viewpoint, which is related to the essential microscopic natures of oxygen vacancy defects such as the features of the vacancy defect states and distributions, and the evolution behaviours. From the unified viewpoint, the various observed characteristics such as the Fermi-level pinning effect in high-K/metal gate stacks, the resistive switching behaviours can be well quantified. Moreover, we may expect that much more newly physical properties are measured in HfO2-based devices.

Keynote Speaker

Prof. Jinfeng Kang


School of Integrated Circuits 

Peking University

Jinfeng Kang is Full Professor of Integrated Circuits School, Peking University. He received his Ph.D degrees in solid-state electronics from Peking University in 1995. His research interests focus on novel oxides and nano devices for sensor, computing & data storage. He has published over 300 conference and journal papers, and was speaker of 30+ invited talks to international conferences, societies, academia, and industry such as IEDM, ESSDERC, ASP-DAC, SSDM, MRS. He is Editor of IEEE Trans. Electron Devices and J. Semiconductors (IOP) and Member of IEEE EDS TCAD Committee.

Your browser is not the latest version. If you continue to browse our website, Some pages may not function properly.

You are recommended to upgrade to a newer version or switch to a different browser. A list of the web browsers that we support can be found here