AP Seminar - Properties of Oxygen Vacancies and Correlated Physical Effects in HfO2-based Thin Films
23 May 2023
14:00 - 15:00
CD620, 6/F, Wing CD, PolyU Map
Prof. Jinfeng Kang
Various magical and wonderful physical effects and properties have been demonstrated in the HfO2-based thin films and devices such as high K gate dielectrics in CMOS, resistive switching in resistance random access memory (RRAM), the robust ferroelectricity in ferroelectric devices, and so on. Those excellent characteristics have triggered the extensive research interests of both the fundamentals and applications for the HfO2-based thin films. However, the underlying physical mechanisms that dominate those demonstrated characteristics in the HfO2-based thin films and devices are still argued. Various theoretical and experimental results showed that the observed fantastic properties in HfO2-based thin films and devices are strongly correlated with the behaviours of oxygen vacancy defects existed in HfO2-based thin films. In this talk, we will try to understand the fantastic characteristics observed in HfO2-based thin films from the unified viewpoint, which is related to the essential microscopic natures of oxygen vacancy defects such as the features of the vacancy defect states and distributions, and the evolution behaviours. From the unified viewpoint, the various observed characteristics such as the Fermi-level pinning effect in high-K/metal gate stacks, the resistive switching behaviours can be well quantified. Moreover, we may expect that much more newly physical properties are measured in HfO2-based devices.
Prof. Jinfeng Kang
School of Integrated Circuits
Jinfeng Kang is Full Professor of Integrated Circuits School, Peking University. He received his Ph.D degrees in solid-state electronics from Peking University in 1995. His research interests focus on novel oxides and nano devices for sensor, computing & data storage. He has published over 300 conference and journal papers, and was speaker of 30+ invited talks to international conferences, societies, academia, and industry such as IEDM, ESSDERC, ASP-DAC, SSDM, MRS. He is Editor of IEEE Trans. Electron Devices and J. Semiconductors (IOP) and Member of IEEE EDS TCAD Committee.