Research at FAST

Department of Applied Physics Department of Applied Physics 114 Qualification BS (NJU) PhD (NJU) ORCID ID 0000-0003-3839-2030 Dr CAI Songhua Research Assistant Professor Research Overview Dr Cai's research interests include the development and application of in situ electron microscopy techniques, as well as the advanced scanning transmission electron microscopy characterization of functional materials and devices (i.e. low- dimensional materials, perovskites). Dr Cai has developed the MEMS-chip based high stability in situ optical-electrical test platform and applied this platform on mechanism studies of novel memristor. Dr Cai's research works also reveal the atomic structures of ultrathin freestanding oxide perovskites and two-dimensional devices. Relevant researches have been published in renowned journals such as Nature, Nature Electronics and Ultramicroscopy. Representative Publications • Visualizing the Invisible in Perovskites, Joule, 4 ( 2020 ), 2545-2548 • Uniform and ultrathin high-k gate dielectrics for two- dimensional electronic devices, Nature Electronics, 2 ( 2019 ), 563-571 • Freestanding crystalline oxide perovskites down to the monolayer limit, Nature, 570 ( 2019 ), 87-90 • Robust memristors based on layered two-dimensional materials, Nature Electronics, 1 ( 2018 ), 130-136 • Development of in situ optical-electrical MEMS platform for semiconductor characterization, Ultramicroscopy, 194 ( 2018 ), 57-63 Patents • The design, fabrication and application of TEM in situ optical-electrical MEMS chip for Nano-materials analysis, ZL201510475758.5 (China's invention patent) • The design, fabrication and application of TEM in situ test chip for Nano-materials analysis, ZL201510476900.8 (China's invention patent)